Research Methodology
2017-02-10 11:54:32 0 举报
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Ability to provide a sufficient number of acceptor levels close to the valence band maximum assuring p-type conductivity
Verifing the calculation results and investigating the conducting mechanism by characterizing the intinsic locolized properties in atomic scale
Low hole effective mass allowing for a good mobility
Selecting promising chemical compounds for p-type TSOs by first-principle calculation
Propose the optimized microstructure and interface condition thus the materials for the components contacting with the p-type TSOs.
Investigate the effect of lattice defects and interface on the properties.
Investigating the effect of synthesis method on the microstructure and performance of CMOSs by experimental work
Propose the most promising candidates of p-type TSOs
Absence of hole self-trapping effect achieved by the absence of small-polaron transport mechanism
High thermodynamic stability allowing for a readily synthesis environment
Wide band gap assuring a sufficient transparency
Propose an optimized material selection and synthesis method for transparent CMOSs
Absence of hole compensation via spontaneously formed donors
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